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BCW61BMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BCW61BMTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2515
- Description: BCW61BMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| hFE Min | 140 |
| Turn Off Time-Max (toff) | 800ns |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -32V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -100mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCW61 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 32V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 20nA |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -550mV |
| Max Breakdown Voltage | 32V |
| Collector Base Voltage (VCBO) | -32V |
| Emitter Base Voltage (VEBO) | -5V |
BCW61BMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -550mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A breakdown input voltage of 32V volts can be used.Maximum collector currents can be below 100mA volts.
BCW61BMTF Features
the DC current gain for this device is 140 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BCW61BMTF Applications
There are a lot of ON Semiconductor BCW61BMTF applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
