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ContactBCW60B,235
BCW60B,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BCW60B,235
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7643
- Description: BCW60B,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW NOISE |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 250MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BCW60 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 32V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Collector Emitter Breakdown Voltage | 32V |
| Transition Frequency | 250MHz |
| Collector Base Voltage (VCBO) | 32V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Turn Off Time-Max (toff) | 800ns |
| RoHS Status | ROHS3 Compliant |
BCW60B,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 250MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BCW60B,235 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,235 Applications
There are a lot of Nexperia USA Inc. BCW60B,235 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
