BCP69T1G

BCP69T1G Overview

In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).There is a transition frequency of 60MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCP69T1G Features

the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 60MHz

BCP69T1G Applications

There are a lot of ON Semiconductor BCP69T1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter