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BCP6925E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCP6925E6327HTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 6693
- Description: BCP6925E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCP69 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | RoHS Compliant |
BCP6925E6327HTSA1 Overview
In this device, the DC current gain is 160 @ 500mA 1V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 1A volts.
BCP6925E6327HTSA1 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCP6925E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP6925E6327HTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
