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BCP69-25,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BCP69-25,115
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4274
- Description: BCP69-25,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.4W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 140MHz |
| Base Part Number | BCP69 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.35W |
| Case Connection | COLLECTOR |
| Power - Max | 650mW |
| Forward Current | 500mA |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 140MHz |
| Forward Voltage | 550mV |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 2A |
| Max Repetitive Reverse Voltage (Vrrm) | 40V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 32V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Forward Surge Current (Ifsm) | 2A |
| Height | 1.7mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
BCP69-25,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 500mA 1V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BCP69-25,115 Features
the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP69-25,115 Applications
There are a lot of Nexperia USA Inc. BCP69-25,115 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
