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BCP69-16,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BCP69-16,115
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 2204
- Description: BCP69-16,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCP69 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 650mW |
| Case Connection | COLLECTOR |
| Power - Max | 1.4W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 140MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -20V |
| Max Collector Current | -2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Base Voltage (VCBO) | -32V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 85 |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| VCEsat-Max | 0.5 V |
| Height | 1.8mm |
| RoHS Status | ROHS3 Compliant |
BCP69-16,115 Overview
In this device, the DC current gain is 100 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.With the emitter base voltage set at -5V, an efficient operation can be achieved.A transition frequency of 40MHz is present in the part.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.In extreme cases, the collector current can be as low as -2A volts.
BCP69-16,115 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 40MHz
BCP69-16,115 Applications
There are a lot of Nexperia USA Inc. BCP69-16,115 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
