BCP68,115

BCP68,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-BCP68,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 586
  • Description: BCP68,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCP68
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 650mW
Case Connection COLLECTOR
Power - Max 1.4W
Transistor Application SWITCHING
Gain Bandwidth Product 170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector (Ic) (Max) 1A
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 85
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.8mm
RoHS Status ROHS3 Compliant

BCP68,115 Overview


DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Maximum collector currents can be below 2A volts.

BCP68,115 Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz

BCP68,115 Applications


There are a lot of Nexperia USA Inc. BCP68,115 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

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