BCP52-16,115

BCP52-16,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-BCP52-16,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 9926
  • Description: BCP52-16,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 115MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 63
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.8mm
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCP52
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 650μW
Case Connection COLLECTOR
Power - Max 1W
Gain Bandwidth Product 145MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current -1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO

BCP52-16,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In this part, there is a transition frequency of 115MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.

BCP52-16,115 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 115MHz

BCP52-16,115 Applications


There are a lot of Nexperia USA Inc. BCP52-16,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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