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ContactBCP52-10,135
BCP52-10,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BCP52-10,135
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7150
- Description: BCP52-10,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Max Power Dissipation | 1.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 145MHz |
| Base Part Number | BCP52 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.35W |
| Case Connection | COLLECTOR |
| Power - Max | 1.3W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 145MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 145MHz |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 73 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
BCP52-10,135 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.145MHz is present in the transition frequency.Breakdown input voltage is 60V volts.The maximum collector current is 1A volts.
BCP52-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP52-10,135 Applications
There are a lot of Nexperia USA Inc. BCP52-10,135 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
