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BCP49E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCP49E6327HTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7901
- Description: BCP49E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | BCP49 |
| Number of Elements | 1 |
| Polarity | NPN |
| Case Connection | COLLECTOR |
| Power - Max | 1.5W |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
BCP49E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 10V, an efficient operation can be achieved.There is a transition frequency of 200MHz in the part.The maximum collector current is 500mA volts.
BCP49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz
BCP49E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP49E6327HTSA1 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
