BC858BW-G

BC858BW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi


  • Manufacturer: Comchip Technology
  • NO: 186-BC858BW-G
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 8269
  • Description: BC858BW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN
Subcategory Other Transistors
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration Single
Power - Max 150mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2.2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant

BC858BW-G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2.2mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.Breakdown input voltage is 30V volts.A maximum collector current of 100mA volts is possible.

BC858BW-G Features


the DC current gain for this device is 220 @ 2.2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz

BC858BW-G Applications


There are a lot of Comchip Technology BC858BW-G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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