BC857BE6327HTSA1

BC857BE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BC857BE6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 2924
  • Description: BC857BE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -45V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Frequency 250MHz
Base Part Number BC857
Number of Elements 1
Element Configuration Single
Current 200mA
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC857BE6327HTSA1 Overview


DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 650mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BC857BE6327HTSA1 Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz

BC857BE6327HTSA1 Applications


There are a lot of Infineon Technologies BC857BE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

In Stock

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