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PNP150°C TJ15nA ICBO1 Elements3 TerminationsSILICONPNPTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount
- Manufacturer: ON Semiconductor
- NO: 598-BC857AMTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8450
- Description: PNP150°C TJ15nA ICBO1 Elements3 TerminationsSILICONPNPTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount(Kg)
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| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -100mA |
| Frequency | 150MHz |
| Base Part Number | BC857 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 310mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 110 |
| Height | 930μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 36 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 12 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 310mW |
BC857AMTF Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.In this part, there is a transition frequency of 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts is possible.
BC857AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC857AMTF Applications
There are a lot of ON Semiconductor BC857AMTF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
