BC856BW-7-F

BC856BW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-BC856BW-7-F
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 501
  • Description: BC856BW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Supplier Device Package SOT-323
Weight 6.010099mg
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -65V
Max Power Dissipation 200mW
Current Rating -100mA
Frequency 200MHz
Base Part Number BC856BW
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Power - Max 200mW
Gain Bandwidth Product 200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Max Frequency 200MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 65V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC856BW-7-F Overview


In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Input voltage breakdown is available at 65V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 65V maximal voltage - Collector EmSingle BJT transistorter Breakdown.The maximum collector current is 100mA volts.

BC856BW-7-F Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of SOT-323

BC856BW-7-F Applications


There are a lot of Diodes Incorporated BC856BW-7-F applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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Please send RFQ , we will respond immediately.