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BC849BLT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC849BLT3G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9600
- Description: BC849BLT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC849BLT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.100MHz is present in the transition frequency.Collector current can be as low as 100mA volts at its maximum.
BC849BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT3G Applications
There are a lot of ON Semiconductor BC849BLT3G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
