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ContactBC847CWH6327XTSA1
BC847CWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BC847CWH6327XTSA1
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 6763
- Description: BC847CWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2011 |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW NOISE |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BC847 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Max Frequency | 250MHz |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Frequency - Transition | 250MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 800μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
BC847CWH6327XTSA1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.250MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC847CWH6327XTSA1 Applications
There are a lot of Infineon Technologies BC847CWH6327XTSA1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
