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NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount
- Manufacturer: ON Semiconductor
- NO: 598-BC847CMTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3240
- Description: NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 310mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 100mA |
| Frequency | 300MHz |
| Base Part Number | BC847 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 310mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 110 |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC847CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.300MHz is present in the transition frequency.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847CMTF Applications
There are a lot of ON Semiconductor BC847CMTF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
