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BC847CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BC847CE6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5662
- Description: BC847CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 100mA |
| Frequency | 250MHz |
| Base Part Number | BC847 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 330mW |
| Transistor Application | SWITCHING |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BC847CE6327HTSA1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 250MHz.Input voltage breakdown is available at 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847CE6327HTSA1 Applications
There are a lot of Infineon Technologies BC847CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
