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BC847BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC847BLT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7313
- Description: BC847BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Type | General Purpose |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 100mA |
| Frequency | 100MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 200 |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BC847BLT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 45V volts.A maximum collector current of 100mA volts is possible.
BC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT1G Applications
There are a lot of ON Semiconductor BC847BLT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
