BC847AMTF

NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount


  • Manufacturer: ON Semiconductor
  • NO: 598-BC847AMTF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 9222
  • Description: NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount(Kg)

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SPECIFICATIONS

Parameters
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC847
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Height 930μm
Length 2.92mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

BC847AMTF Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.300MHz is present in the transition frequency.There is a breakdown input voltage of 45V volts that it can take.The maximum collector current is 100mA volts.

BC847AMTF Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC847AMTF Applications


There are a lot of ON Semiconductor BC847AMTF applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

In Stock

Please send RFQ , we will respond immediately.