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BC846BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC846BLT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9268
- Description: BC846BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Type | General Purpose |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 65V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 65V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 200 |
| Noise Figure | 10 dB |
| Height | 940μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BC846BLT1G Description
The ON Semiconductor BC846BLT1G Transistor is a 65V NPN silicon Bipolar Transistor that is ideal for linear and switching applications. The device is appropriate for low-power surface-mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic.
BC846BLT1G Features
6V Emitter to base voltage (VEBO)
556°C/W Thermal resistance, junction to ambient
Halogen-free/BFR-free
ESD rating - >4000V human body model, >400V machine model
80V Collector to base voltage (VCBO)
BC846BLT1G Applications
Industrial
Power Management
Safety
