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BC846BLP4-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-BC846BLP4-7B
- Package: 3-XFDFN
- Datasheet:
- Stock: 4954
- Description: BC846BLP4-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC846 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Power - Max | 410mW |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 65V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 220mV |
| Max Breakdown Voltage | 65V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 200mA |
| Height | 350μm |
| Length | 1.05mm |
| Width | 650μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BC846BLP4-7B Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 220mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.As a result, it can handle voltages as low as 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC846BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846BLP4-7B Applications
There are a lot of Diodes Incorporated BC846BLP4-7B applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
