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BC817K16E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BC817K16E6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5152
- Description: BC817K16E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 170MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BC817 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 700mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 170MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BC817K16E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 170MHz.There is a breakdown input voltage of 45V volts that it can take.Maximum collector currents can be below 500mA volts.
BC817K16E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6327HTSA1 Applications
There are a lot of Infineon Technologies BC817K16E6327HTSA1 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
