BC817-16LT1

BC817-16LT1 Overview

In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 45V volts.Product comes in the supplier's device package SOT-23-3 (TO-236).This device displays a 45V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC817-16LT1 Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
the supplier device package of SOT-23-3 (TO-236)

BC817-16LT1 Applications

There are a lot of ON Semiconductor BC817-16LT1 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting