BC807-25T116

BC807-25T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-BC807-25T116
  • Package: SOT-23-3
  • Datasheet: pdf
  • Stock: 3384
  • Description: BC807-25T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Package / Case SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2002
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC807
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -700mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -800mA
RoHS Status ROHS3 Compliant

BC807-25T116 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As a result, the part has a transition frequency of 150MHz.Collector current can be as low as 500mA volts at its maximum.

BC807-25T116 Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz

BC807-25T116 Applications


There are a lot of ROHM Semiconductor BC807-25T116 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

In Stock

Please send RFQ , we will respond immediately.