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BC640G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC640G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 168
- Description: BC640G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC640 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
BC640G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.A transition frequency of 150MHz is present in the part.When collector current reaches its maximum, it can reach 500mA volts.
BC640G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
BC640G Applications
There are a lot of ON Semiconductor BC640G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
