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BC640-016G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC640-016G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2799
- Description: BC640-016G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Contact Plating | Copper, Silver, Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | -500mA |
| Frequency | 150MHz |
| Base Part Number | BC640 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC640-016G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.When collector current reaches its maximum, it can reach 500mA volts.
BC640-016G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
BC640-016G Applications
There are a lot of ON Semiconductor BC640-016G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
