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BC639 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC639
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 4805
- Description: BC639 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | TO−92 CASE 29 STYLE 14 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 1A |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BC639 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
BC639 Description
The BC639 is a TO-92 packaging NPN transistor with a VCE of 100V and a continuous collector current of 1A. This transistor can be employed in fairly high voltage switching applications with this characteristic and 1W total power dissipation. The BC639 transistor is a very adaptable device that can be used in a wide range of applications. This transistor can be used to switch devices with somewhat high voltages, such as a tiny DC-DC converter or the pre-or mid-amplifier stage of a power amplifier (power amplifiers typically utilize 60 to 120V DC). This transistor could be useful in several situations.
BC639 Features
Bi-Polar NPN, high voltage Transistor
DC Current Gain (hFE) is 160 maximum
Continuous Collector current (IC) is 1A
Emitter Base Voltage (VBE) is 5V
Base Current (IB) is 100mA maximum
Maximum Collector-Base Voltage |Vcb|: 50 V
Collector Dissipation: 1 W
Transition Frequency:100 MHz
Collector Capacitance 20pF
Operating Junction Temperature Max (Tj): 150 °C
Available in TO-92 Package
BC639 Applications
Simple switching applications
Microphone preamplifiers
Lighting systems
Relay drivers
Audio Amplifiers
Signal Amplifiers
