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BC637RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC637RL1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5509
- Description: BC637RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Frequency | 200MHz |
| Base Part Number | BC637 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC637RL1G Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 200MHz.When collector current reaches its maximum, it can reach 1A volts.
BC637RL1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BC637RL1G Applications
There are a lot of ON Semiconductor BC637RL1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
