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BC637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC637
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 8557
- Description: BC637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Power Dissipation | 625mW |
| Current Rating | 1A |
| Frequency | 100MHz |
| Base Part Number | BC637 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 625mW |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 1A |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 60V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 201mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 60V |
BC637 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor comes in a supplier device package of TO-92-3.This device displays a 60V maximum voltage - Collector Emitter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
BC637 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3
BC637 Applications
There are a lot of ON Semiconductor BC637 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
