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BC618G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC618G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 822
- Description: BC618G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Collector Current | 1A |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 55V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC618 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 55V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 200μA, 200mA |
| Collector Emitter Breakdown Voltage | 55V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 12V |
BC618G Overview
In this device, the DC current gain is 10000 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.Keeping the emitter base voltage at 12V can result in a high level of efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 1A volts.
BC618G Features
the DC current gain for this device is 10000 @ 200mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 150MHz
BC618G Applications
There are a lot of ON Semiconductor BC618G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
