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BC560C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC560C
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 4188
- Description: BC560C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 625mW |
| Current Rating | -100mA |
| Frequency | 150MHz |
| Base Part Number | BC560 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 250MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 100mA |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 45V |
| Frequency - Transition | 250MHz |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 110 |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 200mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
BC560C Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 380 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 45V volts.TO-92-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC560C Features
the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
the supplier device package of TO-92-3
BC560C Applications
There are a lot of ON Semiconductor BC560C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
