BC559

BC559 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC559
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 2302
  • Description: BC559 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 200mg
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -30V
Max Power Dissipation 500mW
Current Rating -100mA
Frequency 150MHz
Base Part Number BC559
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 500mW
Power - Max 500mW
Gain Bandwidth Product 150MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Collector Emitter Saturation Voltage -250mV
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

BC559 Description


The BC559 transistor is a general-purpose PNP transistor. This transistor also comes with many different versions, if you are using this transistor as an amplifier make sure you check the gain of the transistor. The Collector?Emitter Voltage (VCEO) of this device is -30V, the Collector?Base Voltage (VCBO) is -30V, and the Emitter?Base Voltage(VEBO) is -5V. Moreover, this device has a continuous collector current of -100Madc and can operate with 150 °C. Additionally, the gain-bandwidth product of this transistor is very high so it can be used in many high-frequency applications.

When this transistor is in a biased condition, it can allow a maximum current of -100mA across CE (Collector-Emitter) Junction, this state of the transistor is called the saturation state, and driving a load that consumes more current than -100mA may damage the device in this condition. As you already may know, a transistor is a current-controlled device so when the base current is removed the transistor becomes fully off, in this stage the transistor is working in its Cut-off Region and the Base Emitter voltage could be around -660 mV.



BC559 Features


  • Switching and Amplifier

  • High?Voltage: BC556, VCEO = -65V

  • Low?Noise: BC556, BC559

  • Complement to BC546, BC547, BC548, BC549, and BC559

  • These are Pb?Free Devices

  • Available in TO-92 Package



BC559 Applications


  • Build simple audio circuits

  • General-purpose amplifier

  • Driver Modules like Relay Driver, LED driver, etc

  • Amplifier modules like Audio amplifiers, signal Amplifiers, etc

  • Darlington pair


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