BC558

BC558 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC558
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 2405
  • Description: BC558 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Emitter Saturation Voltage -250mV
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -30V
Max Power Dissipation 500mW
Current Rating -100mA
Frequency 150MHz
Base Part Number BC558
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 500mW
Power - Max 500mW
Gain Bandwidth Product 150MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
BC558 Description



Because the BC558 is a PNP transistor when the base pin is held at ground, the collector and emitter will be closed (Forward biased), and when a signal is applied to the base pin, the collector and emitter will be open (Reverse biased). A PNP transistor differs from an NPN transistor in this regard.

BC558 has a gain range of 110 to 800, which determines the transistor's amplification capacity. The Collector pin can handle up to 200mA of peak current, which when combined with the high gain value makes it an excellent choice for audio amplification.

When fully biased, this transistor can allow a continuous current of 100mA to flow between the collector and emitter. The voltage allowed across the Collector-Emitter (V-CE) or Base-Emitter (VBE) could be 200 or 900 mV in this stage, which is known as the Saturation Region. The transistor gets entirely off when the base current is eliminated; this stage is known as the Cut-off Region, and the Base Emitter value may be approximately 660 mV.





BC558 Features



? Amplifier and Switching

? BC556, VCEO = -65 V, High Voltage

? BC559, BC560 are low-noise models.

? Supports BC546, BC547, BC548, BC549, and BC550.

? These products are lead-free, halogen-free, and RoHS compliant.

? Transistor with Bi-Polar PNP Amplifier

? The maximum DC Current Gain (hFE) is 800.

? 100mA is the continuous collector current (IC).

? 200mA is the maximum collector current (Ic).

? The VBE (Voltage Base Emitter) is 5V.

? The peak current (IB) is 200mA.

? To-92 Package is available.



BC558 Applications



? Make basic audio circuitry

? Amplifier for general use

? Relay drivers, LED drivers, and other driver modules.

? Audio amplifiers, signal amplifiers, and other amplifier modules.

? Darlington pair

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