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BC557BZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC557BZL1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 3590
- Description: BC557BZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 45V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 320MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 180 |
| Continuous Collector Current | -100mA |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2005 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | EUROPEAN PART NUMBER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -100mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BC557 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 320MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 650mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
BC557BZL1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages should be kept at -100mA to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).In this part, there is a transition frequency of 320MHz.When collector current reaches its maximum, it can reach 100mA volts.
BC557BZL1 Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 320MHz
BC557BZL1 Applications
There are a lot of ON Semiconductor BC557BZL1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
