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PNP150°C TJ15nA ICBO1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)Through Hole
- Manufacturer: ON Semiconductor
- NO: 598-BC557BTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4007
- Description: PNP150°C TJ15nA ICBO1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)Through Hole(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Current Rating | -100mA |
| Frequency | 150MHz |
| Base Part Number | BC557 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 110 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
BC557BTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC557BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTA Applications
There are a lot of ON Semiconductor BC557BTA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
