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BC556 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC556
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 4315
- Description: BC556 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 200mg |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | -65V |
| Max Power Dissipation | 500mW |
| Current Rating | -100mA |
| Frequency | 150MHz |
| Base Part Number | BC556 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Power - Max | 500mW |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 65V |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Current - Collector (Ic) (Max) | 100mA |
| Max Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 110 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
Description
The BC556 is a PNP (Potential Negative) Transistor. This transistor's maximum collector current is -100mA, with a peak current of -200mA, and its emitter-base voltage is -5V. The collector-emitter voltage is -65V, while the collector-base voltage is -80V. This transistor can withstand temperatures of up to 150 degrees Celsius.
When this transistor is biased, it can allow a maximum current of 100mA across the CE (Collector-Emitter) Junction; this is known as the saturation state of the transistor, and applying a load that consumes more current than 100mA may destroy the device in this state. As you may know, a transistor is a current-controlled device, thus when the base current is removed, the transistor becomes entirely off; at this point, the transistor is in its Cut-off Region, with the Base Emitter voltage ranging from 660 mV to 660 mV.
The amplification capacity of the BC556 Transistor is determined by its gain, which ranges from 125 to 450. The peak current that can be flown through this transistor is 200maA, which, when combined with the gain value, makes this transistor an excellent choice for a preamplifier for audio amplifiers.
Features
? These are Pb?Free Devices
? PNP transistor in a TO-92; SOT54 plastic package.
? Low current (max. 100 mA)
? Switching and Amplifier
? High?Voltage: BC556, VCEO = -65 V
? Low?Noise: BC559, BC560
? Complement to BC546, BC547, BC548, BC549
Applications
? Build simple audio circuits
? General-purpose amplifier
? Driver Modules like Relay Driver, LED driver, etc..
? Amplifier modules like Audio amplifiers, signal Amplifiers, etc..
? Darlington pair
