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NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)Through Hole
- Manufacturer: ON Semiconductor
- NO: 598-BC546BTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6223
- Description: NPN150°C TJ15nA ICBO1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)Through Hole(Kg)
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| Parameters | |
|---|---|
| hFE Min | 110 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240.007063mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Current Rating | 100mA |
| Frequency | 300MHz |
| Base Part Number | BC546 |
| Number of Elements | 1 |
| Voltage | 65V |
| Element Configuration | Single |
| Current | 100mA |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 65V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 65V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
BC546BTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.The part has a transition frequency of 300MHz.Input voltage breakdown is available at 65V volts.Collector current can be as low as 100mA volts at its maximum.
BC546BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BTA Applications
There are a lot of ON Semiconductor BC546BTA applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
