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BC516 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC516
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2807
- Description: BC516 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 200.005886mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2015 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BC516 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Voltage | 30V |
| Element Configuration | Single |
| Current | 4A |
| Power Dissipation | 625mW |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 30000 |
| Continuous Collector Current | 1A |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
Description
The BC516 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. The Darlington configuration, also known as a Darlington pair in electronics, is a circuit made up of two bipolar transistors with one transistor's emitter connected to the other's base, causing the current to increase by the first transistor to be amplified even more by the second. Both transistors' collectors are interconnected. Comparing this setup to each transistor alone, the current gain is significantly higher. It functions like a transistor and is frequently packaged in that way.
Features
-55 to 150°C Operating junction temperature range
This device is designed for applications reguiring extremely high current gain at currents to 1A
Higher switched currents
Available in a variety of single packages
A very high input impedance for the circuit
Applications
Power Management
Industrial
Safety
Amplification
Motors or Relays
