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BC373RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC373RL1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2720
- Description: BC373RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Contact Plating | Copper, Silver, Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | EUROPEAN PART NUMBER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC373 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 250μA, 250mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Max Breakdown Voltage | 80V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 8000 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC373RL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The breakdown input voltage is 80V volts.A maximum collector current of 1A volts can be achieved.
BC373RL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373RL1G Applications
There are a lot of ON Semiconductor BC373RL1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
