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NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
- Manufacturer: ON Semiconductor
- NO: 598-BC372
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 6591
- Description: NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 8000 |
| Continuous Collector Current | 1A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 250μA, 250mA |
