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BC33740BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC33740BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 7047
- Description: BC33740BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 5.33mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 800mA |
| Frequency | 100MHz |
| Base Part Number | BC337 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 210MHz |
| Polarity/Channel Type | NPN |
BC33740BU Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC33740BU Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33740BU Applications
There are a lot of ON Semiconductor BC33740BU applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
