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ContactBC337-40RL1G
BC337-40RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC337-40RL1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4312
- Description: BC337-40RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 20 hours ago) |
| Contact Plating | Copper, Silver, Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | EUROPEAN PART NUMBER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Frequency | 210MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC337 |
| Pin Count | 3 |
| Output Voltage | 9V |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 210MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 210MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 250 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC337-40RL1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.Parts of this part have transition frequencies of 210MHz.The breakdown input voltage is 45V volts.A maximum collector current of 800mA volts is possible.
BC337-40RL1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 210MHz
BC337-40RL1G Applications
There are a lot of ON Semiconductor BC337-40RL1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
