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BC337-25RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC337-25RLRAG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8969
- Description: BC337-25RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-PBCY-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 700mV |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 210MHz |
| Frequency - Transition | 210MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC337-25RLRAG Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 210MHz.When collector current reaches its maximum, it can reach 800mA volts.
BC337-25RLRAG Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
BC337-25RLRAG Applications
There are a lot of ON Semiconductor BC337-25RLRAG applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
