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ContactBC337-25 A1G
BC337-25 A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available at Feilidi
- Manufacturer: Taiwan Semiconductor Corporation
- NO: 799-BC337-25 A1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8455
- Description: BC337-25 A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 625mW |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 800mA |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
BC337-25 A1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC337-25 A1G Features
the DC current gain for this device is 160 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-25 A1G Applications
There are a lot of Taiwan Semiconductor Corporation BC337-25 A1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
