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BC32740BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BC32740BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2446
- Description: BC32740BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | -800mA |
| Frequency | 100MHz |
| Base Part Number | BC327 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -700mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
BC32740BU Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC32740BU Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32740BU Applications
There are a lot of ON Semiconductor BC32740BU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
