BC327-40ZL1G

BC327-40ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC327-40ZL1G
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 979
  • Description: BC327-40ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 1.5W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -800mA
Frequency 260MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC327
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Transistor Application AMPLIFIER
Gain Bandwidth Product 260MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 260MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

BC327-40ZL1G Overview


This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 260MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.A maximum collector current of 800mA volts is possible.

BC327-40ZL1G Features


the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz

BC327-40ZL1G Applications


There are a lot of ON Semiconductor BC327-40ZL1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

Please send RFQ , we will respond immediately.