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PNP-55°C~150°C TJ100nA1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-BC327-025G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 7114
- Description: PNP-55°C~150°C TJ100nA1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -800mA |
| Frequency | 260MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC327 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Power - Max | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 260MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 260MHz |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 160 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BC327-025G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -800mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.Maximum collector currents can be below 800mA volts.
BC327-025G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz
BC327-025G Applications
There are a lot of ON Semiconductor BC327-025G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
