BC307CG

BC307CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC307CG
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 8710
  • Description: BC307CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC307
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -300mV
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 270
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Lead Free Lead Free

BC307CG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 5mA, 100mA.Continuous collector voltages should be kept at -100mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.In the part, the transition frequency is 280MHz.A maximum collector current of 100mA volts can be achieved.

BC307CG Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC307CG Applications


There are a lot of ON Semiconductor BC307CG applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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