BC307B

BC307B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC307B
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 3939
  • Description: BC307B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -45V
Max Power Dissipation 350mW
Current Rating -100mA
Frequency 130MHz
Base Part Number BC307
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 500mW
Power - Max 350mW
Gain Bandwidth Product 280MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Max Frequency 280MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 45V
Frequency - Transition 280MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 150
Height 5.33mm
Length 5.2mm
Width 4.19mm
RoHS Status Non-RoHS Compliant
Lead Free Lead Free

BC307B Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 45V volts.Supplier device package TO-92-3 comes with the product.Device displays Collector Emitter Breakdown (45V maximal voltage).Maximum collector currents can be below 100mA volts.

BC307B Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of TO-92-3

BC307B Applications


There are a lot of ON Semiconductor BC307B applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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